features applications 1 h igh diode semiconductor HDK3400A ?? ? marking: sot-23-3l plastic-encapsulate mosfet n - channel mosfet d g sot- 23 - 3 l ? r0a p roduct summary s v (br) dss r ds(on) max i d 3 0 v ? 32 m @ 10 v ? 5.8 a 45 m @ 2 . 5 v ? ? 38 m @ 4 .5 v ? high dense cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability load/power switching interfacing switching parameter symbol value unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v continuous drain current i d 5.8 a drain current-pulsed (note 1) i dm 30 a power dissipa tion p d 450 mw thermal resistance from junction to ambien t (note 2) r ja 313 /w junction temperature t j 150 storage temperature t stg -55~+150
2 h igh diode semiconductor electrical ch aracteristics (t a =25 unless otherwise noted) parameter symbol test conditio n min typ max unit off characteristics drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 30 v zero gate voltage drain current i dss v ds =24v,v gs = 0v 1 a gate-source leakage current i gss v gs =12v, v ds = 0v 100 na on characteristics (note 3) v gs =10v, i d =5.8a 29 32 m ? v gs =4.5v, i d =5a 32 38 m ? drain-source on-resistance (note 3) r ds(on) v gs =2.5v,i d =4a 40 45 m ? forward tranconductance g fs v ds =5v, i d =5a 8 s gate threshold voltage v gs(th) v ds =v gs , i d =250a 0.7 0.9 1.4 v dynamic character istics (note 4,5) input capacitance c iss 1155 pf output capacitance c oss 108 pf reverse transfer capacitance c rss v ds =15v,v gs =0v,f =1mhz 84 pf gate resistance r g v ds =0v,v gs =0v,f =1mhz 3.6 ? switching characteristics (note 4,5) turn-on delay time t d(on) 5 ns turn-on rise time t r 7 ns turn-off delay time t d(off) 40 ns turn-off fall time t f v gs =10v,v ds =15v, r l =2.7 ? ,r gen =3 ? 6 ns drain-source dio de characteristics and maximum ratings diode forward voltage (note 3) v sd i s =1a,v gs =0v 1 v note : 1. repetitive rating : pulse widt h limited by maximum junction temperature. 2. surface mounted on fr4 board, t < 5 sec. 3. pulse test : pulse width 300s, duty cycle 2%. 4. guaranteed by design, not su bject to production testing.
3 h igh diode semiconductor typical characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 1 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 2 4 6 8 10 12 14 16 18 20 123456 20 25 30 35 012345678910 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t a =75
4 jshd jshd h igh diode semiconductor package outline dimensions sot-23-3l suggested pad layout sot-23-3l min. max. min. max. a 1.050 1.250 0.041 0.049 a1 0.000 0.100 0.000 0.004 a2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 d 2.820 3.020 0.111 0.119 e1 1.500 1.700 0.059 0.067 e 2.650 2.950 0.104 0.116 e e1 1.800 2.000 0.071 0.079 l 0.300 0.600 0.012 0.024 080 8 symbol dimensions in millimeters dimensions in inches 0.950(bsc) 0.037(bsc)
reel taping specifications for surface mount devices-sot-23-3l h igh diode semiconductor 5
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